? 2008 ixys all rights reserved 1 - 3 20080128a mdd 200 ixys reserves the right to change limits, test conditions and dimensions. i frsm = 2x 350 a i favm = 2x 224 a v rrm = 1400-2200 v high power diode modules features ? international standard package ? direct copper bonded al 2 o 3 ceramic with copper base plate ? planar passivated chips ? isolation voltage 3600 v~ applications ? supplies for dc power equipment ? dc supply for pwm inverter ? field supply for dc motors ? battery dc power supplies advantages ? space and weight savings ? simple mounting ? improved temperature and power cycling ? reduced protection circuits symbol conditions maximum ratings i frms i favm t vj = t vjm t c = 100c; 180 sine 350 224 a a i fsm t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 10500 11200 a a t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 9100 9700 a a i 2 t t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 551000 527000 a 2 s a 2 s t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 414000 395000 a 2 s a 2 s t vj t vjm t stg -40...+150 150 -40...+125 c c c v isol 50/60 hz, rms t = 1 min i isol < 1 ma t = 1 s 3000 3600 v~ v~ m d mounting torque (m6) terminal connection torque (m6) 2.25 - 2.75 4.5 - 5.5 nm nm weight typical including screws 120 g 3 1 2 v rsm v rrm type v v 1500 1400 mdd 200-14n1 1700 1600 mdd 200-16n1 1900 1800 mdd 200-18n1 2300 2200 mdd 200-22n1 1 3 2 symbol conditions characteristics values i rrm v r = v rrm ; t vj = t vjm 20 ma v f i f = 300 a; t vj = 25c 1.3 v v t0 r t for power-loss calculations only t vj = t vjm 0.8 0.6 v mw r thjc r thjk per diode; dc current per module per diode; dc current per module 0.130 0.065 0.230 0.115 k/w k/w k/w k/w q s i rm t vj = 125c; i f = 300 a; -di/dt = 50 a/s 625 275 c a d s d a a creeping distance on surface creepage distance in air maximum allowable acceleration 12.7 9.6 50 mm mm m/s 2 data according to iec 60747 and refer to a single diode unless otherwise stated. dimensions in mm (1 mm = 0.0394) e72873
? 2008 ixys all rights reserved 2 - 3 20080128a mdd 200 ixys reserves the right to change limits, test conditions and dimensions. 0 25 50 75 100 125 150 0 100 200 300 0 100 200 300 400 0 25 50 75 100 125 150 1 10 10 5 10 6 0.001 0.01 0.1 1 0 2000 4000 6000 8000 10000 0 100 200 300 400 500 600 0 200 400 600 800 1000 1200 1400 1600 i 2 t [a 2 s] i favm [a] t a [c] t c [c] s t [s] 0 25 50 75 100 125 150 0 100 200 300 400 i fsm [a] i favm [a] p tot [w] 0.001 0.01 0.1 1 10 200 600 1000 1400 1800 0 400 800 1200 1600 2000 0.5 1.5 0.0 1.0 2.0 0 100 200 300 400 500 v r = 0 v t vj = 45c i frms [a] i f [a] v f [v] 80 % v rrm t vj = 45c t vj = 125c 50 hz t [ms] t vj = 125c 180 sin 120 60 30 dc 1.2 2.0 0.2 0.3 0.5 0.8 r thka k/w 0.1 p tot [w] i davm [a] t a [c] circuit b6 0.10 0.04 0.02 r thka k/w 0.30 0.07 0.15 0.20 t [s] t c = 85c t vj = 150c t vj = 125c t vj = 25c 180 sin 120 60 30 dc fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 maximum forward current at case temperature fig. 4 power dissipation versus forward current and ambient temperature (per diode) fig. 5 rated rms current versus time (360 conduction) fig. 6 three phase rectifer bridge: power dissipation versus direct output current and ambient temperature fig. 7 forward current versus voltage drop
? 2008 ixys all rights reserved 3 - 3 20080128a mdd 200 ixys reserves the right to change limits, test conditions and dimensions. z thjc [k/w] t [s] 0.001 0.01 0.1 1 10 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 fig. 8 transient thermal impedance junction to case i r i d i 1 0.01 0.00014 2 0.0065 0.019 3 0.025 0.18 4 0.0615 0.52 5 0.027 1.6
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